Faculty Publications - Chenming Hu

Books

  • Y. Cheng and C. Hu, MOSFET Modeling & BSIM3 User's Guide, Boston, MA: Kluwer Academic Publishers, 1999. [abstract]
  • C. Hu, Ed., Nonvolatile Semiconductor Memories: Technologies, Design, and Applications, IEEE Press Selected Reprint Series, New York: Institute of Electrical and Electronics Engineers, 1991. [abstract]
  • C. Hu and R. M. White, Solar Cells: From Basics to Advanced Systems, McGraw-Hill Series in Electrical Engineering: Power and Energy, New York: McGraw-Hill, 1983. [abstract]

Book chapters or sections

  • M. Dunga, C. Lin, A. Niknejad, and C. Hu, "BSIM-CMG: A Compact Model for Multi-Gate Transistors," in FinFETs and Other Multi-Gate Transistors, Springer, 2008, pp. 113-153.
  • M. V. Dunga, C. Lin, A. Niknejad, and C. Hu, "BSIM-CMG: A compact model for multi-gate transistors," in FinFETs and Other Multi-Gate Transistors, J. P. Colinge, Ed., Integrated Circuits and Systems, New York, NY: Springer Science+Business Media, LLC, 2007, pp. 113-153.

Articles in journals or magazines

Articles in conference proceedings

  • S. Venugopalan, Y. Chauhan, D. Lu, M. Karim, A. Niknejad, and C. Hu, "Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations," in Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual, 2011, pp. 1 -4.
  • V. Sriramkumar, D. Lu, T. Morshed, Y. Kawakami, P. Lee, A. Niknejad, and C. Hu, "BSIM-CG: A compact model of cylindrical gate / nanowire MOSFETs for circuit simulations," in VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on, 2011, pp. 1 -2.
  • C. Lin, M. V. Dunga, D. D. Lu, A. Niknejad, and C. Hu, "Statistical compact modeling of variations in nano MOSFETs," in Proc. 2008 Intl. Symp. on VLSI Technology, Systems and Applications (VLSI-TSA '08), Piscataway, NJ: IEEE Press, 2008, pp. 165-166.
  • D. D. Lu, M. V. Dunga, C. Lin, A. Niknejad, and C. Hu, "A multi-gate MOSFET compact model featuring independent-gate operation," in Proc. 2007 IEEE Intl. Electron Devices Meeting (IEDM '07), Piscataway, NJ: IEEE Press, 2007, pp. 565-568.
  • M. V. Dunga, C. Lin, D. D. Lu, W. Xiong, C. R. Cleavelin, P. Patruno, J. Hwang, F. Yang, A. Niknejad, and C. Hu, "BSIM-MG: A versatile multi-gate FET model for mixed-signal design (Best Student Paper Award)," in Proc. 2007 IEEE Symp. on VLSI Technology, Piscataway, NJ: IEEE Press, 2007, pp. 60-61.
  • C. Hu, C. H. Lin, M. Dunga, D. Lu, and A. Niknejad, "A versatile multi-gate MOSFET compact model: BSIM-MG (Invited Paper)," in 6th Workshop on Compact Modeling (WCM 2007), Vol. 3, Cambridge, MA: Nano Science and Technology Institute, 2007.
  • C. Lin, M. V. Dunga, A. Niknejad, and C. Hu, "A compact quantum-mechanical model for double-gate MOSFET," in Proc. 8th Intl. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2006), T. Tang, G. Ru, and Y. Jiang, Eds., Piscataway, NJ: IEEE Press, 2006, pp. 1272-1274.
  • A. Niknejad, M. V. Dunga, B. Heydari, H. Wan, C. Lin, S. Emami Neyestanak, C. Doan, X. Xi, J. He, and C. Hu, "Challenges in compact modeling for RF and microwave applications," in Workshop on Compact Modeling, 2005, pp. N/A.
  • J. He, J. Xi, M. Chan, H. Wan, M. V. Dunga, B. Heydari, A. Niknejad, and C. Hu, "Charge-based core and the model architecture of BSIM5," in Quality of Electronic Design, 2005, pp. 96-101.
  • A. Niknejad, C. Doan, S. Emami Neyestanak, M. V. Dunga, X. Xi, J. He, R. W. Brodersen, and C. Hu, "Next generation CMOS compact mofels for RF and microwave applications (Invited)," in RFIC Digest of Papers, 2005, pp. 141-144.
  • X. Xi, J. He, M. V. Dunga, C. Lin, B. Heydari, H. Wan, M. Chan, A. Niknejad, and C. Hu, "The next generation BSIM for sun-100nm mixed-signal circuit simulation," in Proceedings of CICC, 2004, pp. 13-16.
  • M. Chan, C. Lin, J. He, Y. Taur, A. Niknejad, and C. Hu, "A framework for modeling double-Gate MOSFETs," in Workshop on Compact Modeling, 2003, pp. N/A.
  • J. He, X. Xi, M. Chan, A. Niknejad, and C. Hu, "An advanced surface-potential-plus MOSFET model," in Workshop on Compact Modeling, 2003, pp. N/A.
  • M. V. Dunga, X. Xi, J. He, I. Polishchuk, Q. Lu, M. Chan, A. Niknejad, and C. Hu, "Modeling of direct tunneling current in multi-layer gate stacks," in Workshop on Compact Modeling, 2003, pp. N/A.
  • A. Niknejad, M. Chan, C. Hu, X. Xi, J. He, P. Su, Y. Cao, H. Wan, M. V. Dunga, C. Doan, S. Emami Neyestanak, and C. Lin, "Compact modeling for RF and microwave applications (Invited)," in Workshop on Compact Modeling, 2003, pp. N/A.
  • C. Lin, J. He, X. Xi, H. Kam, A. Niknejad, M. Chan, and C. Hu, "The impact of scaling on volume inversion in symmetric double-gate MOSFETs," in Semiconductor Device Research Symposium, 2003, pp. 148-149.
  • C. Lin, P. Su, Y. Taur, X. Xi, J. He, A. Niknejad, M. Chan, and C. Hu, "Circuit performance of double-gate SOI CMOS," in Semiconductor Device Research Symposium, 2003, pp. 266-267.
  • P. Su, S. Fung, P. Wyatt, H. Wan, M. Chan, A. Niknejad, and C. Hu, "A unified model for partial-depletion and full depletion SOI circuit designs: Using BSIMPD as a foundation," in Proceedings of CICC, 2003, pp. N/A.
  • P. Su, S. Fung, H. Wan, A. Niknejad, M. Chan, and C. Hu, "An impact ionization model for SOI circuit simulation," in IEEE International SOI Conference, 2002, pp. 201-202.
  • B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, Q. Xiang, T. King Liu, J. Bokor, C. Hu, M. Lin, and D. Kyser, "FinFET scaling to 10nm gate length," in 2002 IEEE Intl. Electron Devices Meeting Technical Digest, Piscataway, NJ: IEEE Press, 2002, pp. 251-254.
  • J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. King Liu, and C. Hu, "Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime," in 2000 Intl. Electron Devices Meeting Technical Digest, Piscataway, NJ: IEEE Press, 2000, pp. 57-60.
  • M. Orshansky, C. Hu, and C. J. Spanos, "Circuit performance variability decomposition," in Proc. 4th Intl. Workshop on Statistical Metrology (IWSM 1999), Piscataway, NJ: IEEE Press, 1999, pp. 10-13.

Technical Reports

Patents